Comparing in impurity dope quantitative decisive manner of semiconductor equipment, and film thickness decisive mannered null channel formation

摘要

PROBLEM TO BE SOLVED: To maximally improve the performance of a semiconductor device having supposed extra carriers from generating. ;SOLUTION: When the impurity doping level of a doping layer increases, the substrate sheet resistance varies comparatively abruptly and slowly in regions A and B, at which the substrate sheet resistances are measured to obtain resistance value change lines L1, L2 through linear approximation. The excess carrier growing position is specified from the intersection of the lines L1, L2 to thereby set the impurity doping level of the doping layer to a value less than the excess carrier growing position.;COPYRIGHT: (C)1999,JPO