The electric charge supply section which was formed to the surface of the electric charge detection device and the MOS die solid-state image pickup device and the CCD

摘要

PROBLEM TO BE SOLVED: To easily enlarge the dynamic range of an output signal in a charge detecting device receiving a signal charge in a stray diffusion region formed on a semiconductor substrate 20 and outputting the output signal corresponding to the potential VFD of the stray diffusion region 22. SOLUTION: The device is provided with a charge supply part 5 which is formed on the surface of the semiconductor substrate 20 and supplies the signal charge. The signal charge storage part 7 having the stray diffusion area 22, which is formed on the surface of the substrate, by detaching it from the charge supply part 5 by a prescribed distance, is disposed. The signal charge storage part 7 stores the signal charge by a coupling capacitor CFD between the stray diffusion area 22 and the substrate 20. The device is provided with a transfer part 1 having a gate electrode 32, which is disposed between the charge supply part 5 and the signal charge storage part 7. The gate electrode 32 of the transfer part 1 and the stray diffusion region 22 of the signal charge accumulation part 7 are capacitive coupled, so that the electrostatic potential of the stray diffusion region 22 becomes deep.