The switched connection film the reluctance effective component and the magnetic memory null 20 which use

摘要

PPROBLEM TO BE SOLVED: To stably obtain an adequate exchange-coupling force at room temperature and in a high temperature range by stabilizing the film composition and the film quality of an antiferromagnetic film which is composed of an Mn alloy and is excellent in corrosion resistivity and thermal property. PSOLUTION: The antiferromagnetic film contains Mn of 20 to 95 atomic per cent, while the remainder is substantially at least one of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The antiferromagnetic film comprises at least one member selected from among an alloy phase and a compound phase formed between the R element and Mn, and is formed by sputtering using a sputtering target in which no single-phase Mn grain having the maximum grain size exceeding 50 μm exists. The divergence of the composition of the antiferromagnetic film from that of the sputtering target is less than 10 atomic per cent. The antiferromagnetic film 3 is laminated with a ferromagnetic film 4 to constitute the exchange-coupling film 2. PCOPYRIGHT: (C)2006,JPO&NCIPI