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Circuit configurations and methods for manufacturing five-volt one time programmable (OTP) memory arrays

机译:用于制造五伏一次可编程(OTP)存储器阵列的电路配置和方法

摘要

This invention discloses a circuit trimming system that includes a one-time programmable memory (OTP). The OTP further includes a forward biased trim device connected between a voltage supply Vcc and a ground voltage wherein the Vcc having a reduced voltage substantially lower than a trimming voltage for a reversed biased device at ten volts or higher. The OTP further includes a drive circuit provided to select the OTP at a low current operating condition and for turning on a high trim current through the forward biased trim device for trimming and programming the OTP. The trimming system further includes a sense circuit connected across the forward biased trim device is for sensing a current and voltage of the forward biased trim device.
机译:本发明公开了一种电路修整系统,其包括一次性可编程存储器(OTP)。 OTP还包括连接在电源Vcc和接地电压之间的正向偏置调整装置,其中,Vcc的降压电压实质上低于十伏或更高的反向偏置装置的调整电压。 OTP还包括驱动电路,该驱动电路被设置为在低电流操作条件下选择OTP并且用于通过正向偏置的微调装置接通高微调电流以对OTP进行微调和编程。修整系统还包括跨过前向偏置的修整装置连接的感测电路,用于感测前向偏置的修整装置的电流和电压。

著录项

  • 公开/公告号US2008112204A1

    专利类型

  • 公开/公告日2008-05-15

    原文格式PDF

  • 申请/专利权人 SHEKAR MALLIKARARJUNASWAMY;

    申请/专利号US20060588736

  • 发明设计人 SHEKAR MALLIKARARJUNASWAMY;

    申请日2006-10-28

  • 分类号G11C17/00;

  • 国家 US

  • 入库时间 2022-08-21 20:16:07

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