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Method and System for Lithography Simulation and Measurement of Critical Dimensions with Improved CD Marker Generation and Placement
Method and System for Lithography Simulation and Measurement of Critical Dimensions with Improved CD Marker Generation and Placement
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机译:利用改进的CD标记生成和放置进行光刻模拟和测量关键尺寸的方法和系统
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摘要
A method and system for lithography simulation and measurement of critical dimensions with improved CD marker generation and placement is disclosed. The method and system specify a position for measuring a difference between a lithography image and a target pattern, generate one or more CD marker candidates, and select at least one CD marker from the one or more CD marker candidates.
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