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Voltage Pump Circuit with an Oxide Stress Control Mechanism for use in High-Voltage Applications in an Integrated Circuit
Voltage Pump Circuit with an Oxide Stress Control Mechanism for use in High-Voltage Applications in an Integrated Circuit
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机译:具有氧化物应力控制机制的电压泵电路,用于集成电路的高压应用
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摘要
A voltage pump circuit that has an oxide stress control mechanism is disclosed. In particular, the oxide stress control mechanism of the voltage pump circuit ensures a safe transistor gate-to-source voltage in high-voltage applications in an integrated circuit. In particular, the down level of the gate voltage of the output transistor may be conditionally limited. For example, an offset in the down level of the gate voltage is created by conditionally developing an offset voltage in the lower rail voltage of the gate driver. The offset voltage is created by directing a predetermined current through a resistance. The current is conditional such that the current is about zero when the power supply voltage is less than or equal to a predetermined level, and the current is greater than zero when the power supply voltage is greater than a predetermined level.
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