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REDUCTION OF SLIP AND PLASTIC DEFORMATIONS DURING ANNEALING BY THE USE OF ULTRA-FAST THERMAL SPIKES
REDUCTION OF SLIP AND PLASTIC DEFORMATIONS DURING ANNEALING BY THE USE OF ULTRA-FAST THERMAL SPIKES
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机译:通过使用超快速热斑减少退火过程中的滑移和塑性变形
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摘要
Exemplary embodiments provide methods for reducing and/or removing slip and plastic deformations in semiconductor materials by use of one or more ultra-fast thermal spike anneals. The ultra-fast thermal spike anneal can be an ultra-high temperature (UHT) anneal having an ultra-short annealing time. During the ultra-fast thermal spike anneal, an increased annealing power density can be used to achieve a desired annealing temperature required by manufacturing processes. In an exemplary embodiment, the annealing temperature can be in the range of about 1150° C. to about 1390° C. and the annealing dwell time can be on the order of less than about 0.8 milliseconds. In various embodiments, the disclosed spike-annealing processes can be used to fabrication structures and regions of MOS transistor devices, for example, drain and source extension regions and/or drain and source regions.
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