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LED epiwafer pad manufacturing process amp; new construction thereof

机译:Led外延片的制造工艺及其新结构

摘要

A pad manufacturing process applied in LED epiwafer and a new construction thereof comprising of a means to increase interfacial bonding strength being provided first to the surface of the epiwafer; followed with a metal deposition means provided to the surface of the epiwafer by having the surface processed with plasma to improve adhesion between pad and epiwafer; and plating conditions being controlled to obtain finer and more uniform grains to correct the problem of pad surface roughness in order to improve the bonding strength between pad and bonding wire. Furthermore, a new construction of epiwafer and a pad is comprised of an epiwafer containing a substrate, an epitaxial layer, and a first metal layer covering the top of the epitaxial layer; an adhesion layer covering the top of the first metal layer; and a pad covering the top of the adhesion layer in sequence.
机译:在LED外延片中应用的焊盘制造工艺及其新结构包括首先在外延片的表面上提供增加界面结合强度的装置。接着,通过用等离子体处理表面以提供焊盘和外延晶片之间的粘附力,将金属沉积装置设置在外延晶片的表面上。控制电镀条件以获得更细和更均匀的晶粒,以纠正焊盘表面粗糙度的问题,从而提高焊盘和键合线之间的键合强度。此外,外延晶片和焊盘的新结构由外延晶片构成,该外延晶片包含衬底,外延层和覆盖外延层顶部的第一金属层;第一金属层覆盖外延层的顶部。覆盖第一金属层顶部的粘合层;依次覆盖粘合层顶部的垫。

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