METHOD AND APPARATUS FOR CONTROLLING COMPOSITION PROFILE OF COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS

摘要

The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention is directed to a method of forming a Cu(In,Ga)(S,Se)₂ layer with substantially uniform Ga distribution. In a particular aspect, the method includes depositing a precursor film on the base, the precursor film including Cu, In and Ga, sulfurizing the precursor film thus forming a sulfurized precursor layer with a substantially uniform Ga distribution, and selenizing the sulfurized precursor layer to reduce the sulfur concentration therein and obtain the Cu(In,Ga)(S,Se)₂ layer with substantially uniform Ga distribution. In a further aspect, the method also includes the step of selenizing the precursor film.