TRI-GATE DEVICE WITH CONFORMAL PVD WORKFUNCTION METAL ON ITS THREE-DIMENSIONAL BODY AND FABRICATION METHOD THEREOF

摘要

A method of fabricating a tri-gate semiconductor device comprising a semiconductor body having an upper surface and side surfaces and a metal gate that has an approximately equal thickness on the upper and side surfaces. Embodiments of a tri-gate device with conformal physical vapor deposition workfunction metal on its three-dimensional body are described herein. Other embodiments may be described and claimed.