Multi-bit memory technology (MMT) and cells

摘要

As the process development has matured and technology has scaled to smaller and smaller dimensions, the Poly-silicon floating gate cell is approaching its scaling limitations, multi-bit storage in a single memory cell has become the norm. The use of a Nitride layer or a silicon-nodule layer capable of location specific charge storage with no spreading, allows easy implementation of multi-bit technology. If the charge is stored in the traps in the Nitride storage layer, a Oxide Nitride Oxide is used as the storage element. If charge is stored in layer of discrete silicon-nodules separated by a thin insulating film, an Oxide silicon-nodule Oxide storage element is used as the storage layer.;The multi-bit cells proposed are programmed by hot electron programming and erased either by using high Voltage tunneling, or by use of a lower voltage MIM Metal-Insulator-Metal Diode carrier generation method and technology called the Tunnel-Gun or TG.