首页>
外国专利>
Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors
Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors
展开▼
机译:源极/漏极至栅极电容开关和宽调谐范围变容二极管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A two-terminal capacitive circuit element 100 includes a MOS transistor including a source 126 and drain 127 separated by a body region 131, and a gate 105 separated from the body 129 by a gate insulator layer 110, and a bypass capacitor 125. The gate node (port2; 115) is AC grounded through the bypass capacitor 125 and the source 126 and drain 127 are tied together (port-1; 120). By toggling the transistor on and off using an appropriate gate to body voltage, the capacitance of the capacitive circuit element 100 between port-1 and port-2 significantly changes.
展开▼