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MEMORY ELEMENT, METHOD FOR MANUFACTURING MEMORY ELEMENT, MEMORY DEVICE, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING TRANSISTOR
MEMORY ELEMENT, METHOD FOR MANUFACTURING MEMORY ELEMENT, MEMORY DEVICE, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING TRANSISTOR
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机译:存储器元件,制造存储器元件的方法,存储器装置,电子设备以及晶体管的制造方法
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摘要
A method for manufacturing a memory element including forming a first electrode on a first face of a substrate; forming a ferroelectric layer on a second face of the first electrode, the second face being on an opposite side to the substrate side, and the ferroelectric layer being mainly made of a crystalline organic ferroelectric material; and forming a second electrode on a third face of the ferroelectric layer, the third face being on an opposite side to the first electrode side, the second electrode being formed by ejecting an vaporized electrode material in a direction inclined with respect to a normal line direction of the substrate and depositing the vaporized electrode material on the third face of the ferroelectric layer, wherein data writing/reading is performed by changing a polarized state of the ferroelectric layer by applying a voltage between the first electrode and the second electrode.
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