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METHOD FOR USING A MODIFIED POST-ETCH CLEAN RINSING AGENT
METHOD FOR USING A MODIFIED POST-ETCH CLEAN RINSING AGENT
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机译:修改后的抹后清洁剂的使用方法
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摘要
The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more opening to the post-etch clean. This method may further include exposing the substrate having been subjected to the post-etch clean to a rinsing agent, wherein a resistivity of the rinsing agent is selected based upon the delay time.
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