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Dielectric resonator, dielectric resonator frequency adjusting method, and dielectric resonator integrated circuit

机译:介电共振器,介电共振器频率调整方法以及介电共振器集成电路

摘要

An oscillator comprising a dielectric resonator (DR) has a high controllability and reproducibility of coupling between the dielectric resonator (DR) and an oscillation circuit, and an integrated circuit is reduced in size. The dielectric resonator (DR) (1) is composed of a dielectric substrate (2), grounding conductive layers (3a, 3b) formed on both sides of the dielectric substrate (2), and via holes (4a) for electrical connection between the conductive layers. A coupling element (7a) composed of a slot (5a) provided in the central portion of the grounding conductive layer (3a) and a patch (6a) surrounded by the slot (5a) is coupled to the dielectric resonator (DR) (1). The patch (6a) is connected to a transmission line (13a) on an oscillation circuit (9) through a bump (8). The transmission line (13a) is connected to the ground through a termination resistor (15a). On the oscillation circuit MMIC (9), the transmission line (13a) is connected to the gate of a transistor FET (14) A capacitive transmission line (13a) for positive feedback is connected to the transistor FET (14). The output of the transistor FET (14) is connected to a transmission line (13c) for output through a matching circuit (16). The transmission line (13c) is bump-connected to a coplanar line (12a) composed of a signal conductive layer (11a) formed on an edge of the dielectric resonator (DR) (1) and the grounding conductive layer (3a).
机译:包括介电共振器(DR)的振荡器具有高的可控制性和介电共振器(DR)与振荡电路之间的耦合的再现性,并且集成电路的尺寸减小。介电共振器(DR)( 1 )由介电基板( 2 ),接地导电层( 3 a, 3 b )形成在介电基板( 2 )的两侧,并形成通孔( 4 a )用于导电层之间的电连接。耦合元件( 7 a )由一个槽口( 5 a )组成,该槽口位于电路板的中央部分接地导电层( 3 a )和贴片( 6 a )被槽( 5 a )耦合到介质谐振器(DR)( 1 )。贴片( 6 a )连接到振荡电路( B> 13 a )上的传输线( 13 a ) B> 9 )通过凹凸( 8 )。传输线( 13 a )通过终端电阻( 15 a )接地。在振荡电路MMIC( 9 )上,传输线( 13 a )连接到晶体管FET( 14 )用于正反馈的电容性传输线( 13 a )连接到晶体管FET( 14 )。晶体管FET( 14 )的输出连接到传输线( 13 c ),以通过匹配电路( 16 )。传输线( 13 c )凸点连接到由a组成的共面线( 12 a )信号导电层( 11 a )形成在介电谐振器(DR)( 1 )和接地导电层( 3 a )。

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