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Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
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机译:利用自旋转移的磁存储单元的电流驱动切换和使用具有增强的读取和写入余量的此类单元的磁存储器
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摘要
A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
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