首页> 外国专利> Fully-buffered memory-module with redundant memory buffer in serializing advanced-memory buffer (AMB) for repairing DRAM

Fully-buffered memory-module with redundant memory buffer in serializing advanced-memory buffer (AMB) for repairing DRAM

机译:全缓冲内存模块,在串行高级内存缓冲区(AMB)中具有冗余内存缓冲区,用于修复DRAM

摘要

A repairing fully-buffered memory module can have memory chips with some defects such as single-bit errors. A repair controller is added to the Advanced Memory Buffer (AMB) on the memory module. The AMB fully buffers memory requests that are sent as serial packets over southbound lanes from a host. Memory-access addresses are extracted from the serial packets by the AMB. The repair controller compares the memory-access addresses to repair addresses and diverts access from defective memory chips to a spare memory for the repair addresses. The repair addresses can be located during testing of the memory module and programmed into a repair address buffer on the AMB. The repair addresses could be first programmed into a serial-presence-detect electrically-erasable programmable read-only memory (SPD-EEPROM) on the memory module, and then copied to the repair address buffer on the AMB during power-up.
机译:维修中的全缓冲​​内存模块可能具有一些诸如单位错误之类的缺陷的内存芯片。将修复控制器添加到内存模块上的高级内存缓冲区(AMB)。 AMB完全缓冲内存请求,这些请求以串行数据包的形式从主机通过南行通道发送。 AMB从串行数据包中提取内存访问地址。修复控制器将内存访问地址与修复地址进行比较,并将访问权限从有缺陷的存储芯片转移到用于修复地址的备用内存。可以在测试内存模块期间定位维修地址,并将其编程到AMB上的维修地址缓冲区中。修复地址可以首先编程到存储模块上的串行存在检测电可擦可编程只读存储器(SPD-EEPROM)中,然后在加电期间复制到AMB上的修复地址缓冲区中。

著录项

  • 公开/公告号US7379361B2

    专利类型

  • 公开/公告日2008-05-27

    原文格式PDF

  • 申请/专利权人 RAMON S. CO;DAVID SUN;

    申请/专利号US20060309297

  • 发明设计人 DAVID SUN;RAMON S. CO;

    申请日2006-07-24

  • 分类号G11C29/00;

  • 国家 US

  • 入库时间 2022-08-21 20:10:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号