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Charged beam drawing data creation method, charged beam drawing method, charged beam drawing apparatus and semiconductor device manufacturing method

机译:带电束绘制数据创建方法,带电束绘制方法,带电束绘制设备和半导体器件制造方法

摘要

Drawing-data creating method includes selecting charged beam drawing-apparatus dividing drawing area into main fields, subfields and unit fields (U-fields), dividing design data (D-data) corresponding to pattern drawn on area into first D-data corresponding to main fields, dividing first D-data into second D-data corresponding to subfields, dividing second D-data into third D-data corresponding to U-fields, evaluating resist resolution to predetermined dimension on U-fields, creating table relating U-fields to resolution based on result of evaluating the resolution, judging whether third D-data corresponds to data having the dimension and corresponds to pattern falling in U-field having rejectable resolution is based on the dimension and table, and converting data judged to correspond to the data among third D-data into first drawing-data after coordinate conversion so that the data fall in U-field having acceptable resolution, and converting data judged not to correspond to the data among third D-data into second drawing-data without coordinate conversion.
机译:绘图数据创建方法包括:选择带电束绘图设备,将绘图区域划分为主字段,子字段和单位字段(U字段),将与在该区域上绘制的图案相对应的设计数据(D-data)划分为与之对应的第一D-data。主要字段,将第一D数据划分为与子字段对应的第二D数据,将第二D数据划分为与U字段对应的第三D数据,在U字段上评估抗蚀剂分辨率为预定尺寸,创建与U字段相关的表根据评估分辨率的结果对分辨率进行判断,基于维度和表格判断第三D数据是否对应于具有该维的数据并对应于落入具有可拒绝分辨率的U场中的图案,并转换判断为与该维对应的数据坐标转换之后,将第三D数据中的数据转换为第一绘图数据,使得该数据落入具有可接受的分辨率的U场中,并且将判断为不对应于数据a的数据转换为将第三个D数据转换为第二个图形数据,而无需进行坐标转换。

著录项

  • 公开/公告号US7368735B2

    专利类型

  • 公开/公告日2008-05-06

    原文格式PDF

  • 申请/专利权人 IKUO YONEDA;

    申请/专利号US20050295533

  • 发明设计人 IKUO YONEDA;

    申请日2005-12-07

  • 分类号G21K5/04;

  • 国家 US

  • 入库时间 2022-08-21 20:09:29

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