首页> 外国专利> Process for chemical etching of parts fabricated by stereolithography

Process for chemical etching of parts fabricated by stereolithography

机译:化学蚀刻通过立体光刻法制造的零件的方法

摘要

A process for chemically etching a stereolithography resin involves chemically etching a shaped object of the resin at a temperature in a range of from about 20° C. to about 30° C. for a time of from about 30 seconds to about 60 seconds with a saturated aqueous solution of permanganate, for example potassium permanganate. The process is faster, simpler and uses less environmentally harmful chemicals than previous etching processes for SLA parts. Etching is also more thorough and can reach hard to access places that sand blasting cannot. The etching process may be part of a process for metallization of a rapid prototyping part fabricated by stereolithography. Excellent etch coverage leads excellent coverage by the coating metal and to stronger metal layers.
机译:化学蚀刻立体光刻树脂的方法包括在约20℃至约30℃的温度范围内用约30秒至约60秒的时间化学蚀刻树脂的成型物体。高锰酸盐的饱和水溶液,例如高锰酸钾。与以前的SLA零件蚀刻工艺相比,该工艺更快,更简单并且使用的环境有害化学物质更少。蚀刻也更彻底,可以到达喷砂无法到达的地方。蚀刻工艺可以是用于通过立体光刻法制造的快速成型部件的金属化工艺的一部分。出色的蚀刻覆盖率可导致涂层金属具有出色的覆盖率,并形成更坚固的金属层。

著录项

  • 公开/公告号US7354870B2

    专利类型

  • 公开/公告日2008-04-08

    原文格式PDF

  • 申请/专利权人 BENLI LUAN;

    申请/专利号US20050272098

  • 发明设计人 BENLI LUAN;

    申请日2005-11-14

  • 分类号H01L21/302;

  • 国家 US

  • 入库时间 2022-08-21 20:09:16

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号