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Ultra low-frequency response, DC-blocked low-noise amplifier

机译:超低频响应,隔直流低噪声放大器

摘要

An amplifier circuit is disclosed that allows for practical integrated circuit implementation of a dc-blocked, low-noise differential amplifier capable of amplifying ultra low-frequency signals and amplitudes ranging upwards of a few microvolts. DC-blocking capacitors having a capacitance value close to that of the effective input capacitance of the low-noise amplifier's inputs can be used by incorporating a positive feedback mechanism that tracks any variations in the amplifier gain or integrated circuit's technology process and lowers or cancels the input parasitic capacitances. Advantageously, the parasitic capacitance of transistors, typically field effect transistors, located on an integrated circuit chip are used in the feedback mechanism. This reduces the capacitive voltage division loss of the signal at the input of the amplifier while still allowing for the use of very small values of dc-blocking capacitance. No other active elements other than the amplifier itself are required to attain a low area, integrated circuit implementation of a dc-blocked, yet ultra low-frequency high pass filtered, low-noise amplifier.
机译:公开了一种放大器电路,该放大器电路允许闭路的低噪声差分放大器的实际集成电路实现,该放大器能够放大超低频信号和幅度在几微伏以上的幅度。可以通过引入正反馈机制来使用电容值接近低噪声放大器输入的有效输入电容值的隔直流电容器,该机制可跟踪放大器增益或集成电路技术过程中的任何变化并降低或消除该噪声。输入寄生电容。有利地,在反馈机构中使用位于集成电路芯片上的晶体管(通常是场效应晶体管)的寄生电容。这减少了放大器输入端信号的电容性分压损耗,同时仍允许使用很小的隔直电容值。除放大器本身外,不需要其他有源元件来实现直流阻隔但超低频高通滤波,低噪声放大器的低面积,集成电路实现。

著录项

  • 公开/公告号US7317356B2

    专利类型

  • 公开/公告日2008-01-08

    原文格式PDF

  • 申请/专利权人 RAVI S. ANANTH;

    申请/专利号US20050173507

  • 发明设计人 RAVI S. ANANTH;

    申请日2005-07-01

  • 分类号H03F3/45;

  • 国家 US

  • 入库时间 2022-08-21 20:09:08

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