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process for the production of bodies of porous silicon to form lenticular bodies of porous silicon avwenti form lenticular products by means of this method and use of them
process for the production of bodies of porous silicon to form lenticular bodies of porous silicon avwenti form lenticular products by means of this method and use of them
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机译:的方法,用于生产多孔硅体以形成双凸透镜体的方法通过使用该方法形成多孔硅体
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摘要
Production of porous silicon bodies with a planoconvex or concavoconvex lens-shaped structure, comprises applying the lens-like photolacquer coat; transferring the shape of the lens-like photolacquer coat on to the silicon surface by etching process; masking the silicon surface; porosing the non-masked region of the silicon surface by applying of a current density (J1) for a time period (t1); and porosing the silicon material, which is adjacent to the porosified silicon by applying a various current density for different time period. Production of porous silicon bodies with a planoconvex or concavoconvex lens-shaped structure, comprises applying the lens-like photolacquer coat; transferring the shape of the lens-like photolacquer coat on to the silicon surface by etching process; masking the silicon surface; porosing the non-masked region of the silicon surface by applying of a current density (J1) for a time period (t1); porosing the silicon material, which is adjacent to the silicon that is porosified in the above by applying a current density (J2) for a time period (t2); porosing the silicon material, which is adjacent to the silicon that is porosified in the above step by applying a current density (J3) for a time period (t3); porosing the silicon material, which is adjacent to the silicon that is porosified in the above step by applying a current density (J4) for a time period (t4). An independent claim is included for a porous silicon body (14) with lens-shaped structure, comprising a first outer layer (7), an intermediate layer (8), and a second outer layer (9), which is produced by the process, where the pore channels (11), (12), (13) are arranged essentially perpendicular to the surface of the silicon body and the porosity of the intermediate layer is greater than the porosity of the first outer layer and the second outer layer.
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