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METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH REDUCED TEMPERATURE DEPENDENCE
METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH REDUCED TEMPERATURE DEPENDENCE
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机译:降低温度依赖性的合成抗铁磁网结构的方法和装置
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摘要
A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer (210), a first insertion layer (208), a coupling layer (206), a second insertion layer (204), and a second ferromagnetic layer (202). The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers (208, 204) is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
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