A CdTe photovoltaic cell according to the present invention comprises an n- type CdS window layer; a p-type CdTe absorber layer; and a CdClSUB2/SUB cap layer. The cell is manufactured by growing each successive layer by MOCVD in situ. In the particular example of figure 1, the cell (100) comprises a transparent superstrate (101), a layer of transparent conductive oxide (TCO) (102), a high resistivity (high-p) layer (103), a front contact (104) formed upon the TCO layer, a window layer (105), an absorber layer (106), a highly p+ doped layer (107), a cap layer (108) and a back contact (109) provided upon said cap layer (108).
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