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HALL-EFFECT ELEMENT WITH INTEGRATED OFFSET CONTROL AND METHOD FOR OPERATING HALL-EFFECT ELEMENT TO REDUCE NULL OFFSET
HALL-EFFECT ELEMENT WITH INTEGRATED OFFSET CONTROL AND METHOD FOR OPERATING HALL-EFFECT ELEMENT TO REDUCE NULL OFFSET
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机译:具有集成偏移量控制的霍尔效应元件以及用于操作霍尔效应元件以减小空偏移的方法
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摘要
A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer.
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