VERY HIGH EFFICIENCY MULTI-JUNCTION SOLAR SPECTRUM INTEGRATOR CELLS, AND THE CORRESPONDING SYSTEM AND METHOD

摘要

Application of Solid Phase Epitaxy (SPE) fabrication technology to very high efficiency radiation hardened solar cells, and the corresponding system and method, are presented The heteroepitaxial structure is realizable, due to the adequate lattice matching of the component crystals It offers several advantages compared to the other solar cell systems based on heteroepitaxial photovoltaic solar energy converters The active p-n junction is maintained in the well-known high power conversion efficiency of GaAs ZnSe is a direct large band gap semiconductor Therefore, the energy integration effect of the graded band structure of the heteroepitaxial interface, is extended This graded band gap phenomenon introduces a built-in potential, improving the capture efficiency of the p-n junction, placed to its close vicinity The luminescence of ZnSe increases the spectral response of the solar cell system.