HIGH RATE DEPOSITION AT LOW PRESSURES IN A SMALL BATCH REACTOR

摘要

A kind of chemical vapor deposition reactor includes that cassette with the pedestal that vertical-horizontal is orientated has the pin upwardly extended suspension chip in a pair of base as hot plate. It is more than 10 cm/s that reactant gas injector and exhaust apparatus, which are located at so that strong supply reaction gas is concentrated in each chip speed,. The pressure is maintained at range 0.1 to 5,000 millitorr. Strong air-flow avoids internal gas drive effect, and boundary layer is thinned and leads to transmit reactant faster to substrate surface, so as to cause the operation of the surface rate threshold of reaction. The ship for the side that multiple individually controllable heaters are vertically around spaced apart. The temperature of temperature sensor monitoring provides input adjusting heater along height degree for controller and drives to optimized temperature uniformity.