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LASER STIMULATED ATOM PROBE CHARACTERIZATION OF SEMICONDUCTOR AND DIELECTRIC STRUCTURES

机译:半导体和介电结构的激光激发原子探针表征

摘要

A laser stimulated atom probe for atom probe imaging of dielectric and low conductivity semiconductor materials is disclosed. The laser stimulated atom probe comprises a conventional atom probe providing a field emission tip and ion detector arrangement, a laser system providing a laser short laser pulse and synchronous electronic timing signal to the atom probe, and an optical system for delivery of the laser beam onto the field emitting tip apex. Due to enhanced absorption, it is also possible to realize a photo ionization mechanism, wherein the laser stimulates electronic transitions from the more extended surface atoms, thereby ionizing the surface atom.
机译:公开了一种用于介电和低电导率半导体材料的原子探针成像的激光激发原子探针。激光激发的原子探针包括提供场发射尖端和离子检测器装置的常规原子探针,向原子探针提供激光短激光脉冲和同步电子定时信号的激光系统,以及用于将激光束传输到其上的光学系统场发射尖端顶点。由于增强的吸收,还可能实现光电离机制,其中激光激发来自更延伸的表面原子的电子跃迁,从而使表面原子电离。

著录项

  • 公开/公告号EP1649485A4

    专利类型

  • 公开/公告日2008-01-09

    原文格式PDF

  • 申请/专利权人 CHISM WILLIAM W. II;

    申请/专利号EP20040756572

  • 发明设计人 CHISM WILLIAM W. II;

    申请日2004-07-01

  • 分类号H01J49;B01D59/44;G01Q70;H01J37/285;

  • 国家 EP

  • 入库时间 2022-08-21 19:58:23

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