首页> 外国专利> SEMICONDUCTOR MANUFACTURING APPARATUS, ABNORMALITY DETECTION IN SUCH SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD FOR SPECIFYING ABNORMALITY CAUSE OR PREDICTING ABNORMALITY, AND RECORDING MEDIUM WHEREIN COMPUTER PROGRAM FOR EXECUTING SUCH METHOD IS RECORDED

SEMICONDUCTOR MANUFACTURING APPARATUS, ABNORMALITY DETECTION IN SUCH SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD FOR SPECIFYING ABNORMALITY CAUSE OR PREDICTING ABNORMALITY, AND RECORDING MEDIUM WHEREIN COMPUTER PROGRAM FOR EXECUTING SUCH METHOD IS RECORDED

机译:半导体制造装置,这种半导体制造装置中的异常检测,指定异常原因或预测异常的方法以及在执行该方法的计算机程序中记录的介质

摘要

In order to detect an abnormality of semiconductor manufacturing apparatus, a biaxial coordinate system having first and second axes respectively assigned two different monitoring parameters selected from plural apparatus status parameters representing statuses of semiconductor manufacturing apparatus is prepared. As monitoring parameters, for example, a cumulative film thickness for deposition processes that have previously been performed in deposition apparatus and an opening of the pressure control valve located in a vacuum exhaust path to control the internal pressure of a reaction vessel are selected. Values of monitoring parameters obtained when the semiconductor manufacturing apparatus was normally operating are plotted on the biaxial coordinate system. A boundary between a normal condition and an abnormality status is set around a plot group. Values of monitoring parameters obtained during present operation of the semiconductor manufacturing apparatus are plotted on the biaxial coordinate system to determine whether or not there exists an abnormality and identify a type of abnormality based on a positional relation between the plots and the boundary.
机译:为了检测半导体制造装置的异常,准备了双轴坐标系,其第一轴和第二轴分别分配有从代表半导体制造装置的状态的多个装置状态参数中选择的两个不同的监视参数。作为监视参数,例如,选择先前已经在沉积设备中执行的用于沉积过程的累积膜厚度和位于真空排气路径中的压力控制阀的开口以控制反应容器的内部压力。在双轴坐标系上标绘了当半导体制造设备正常操作时获得的监视参数的值。在情节组周围设置正常状态和异常状态之间的边界。在半导体制造装置的当前操作期间获得的监视参数的值被绘制在双轴坐标系上,以确定是否存在异常并基于曲线与边界之间的位置关系来识别异常的类型。

著录项

  • 公开/公告号EP1845553A4

    专利类型

  • 公开/公告日2008-11-05

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD.;

    申请/专利号EP20050820365

  • 申请日2005-12-22

  • 分类号H01L21/205;C23C16/44;

  • 国家 EP

  • 入库时间 2022-08-21 19:57:28

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