DIVISION-BASED SENSING AND PARTITIONING OF ELECTRONIC MEMORY

摘要

Providing distinction between overlapping threshold levels of one or more multi-cell memory devices (102, 202, 302) is described herein. By way of example, a system can include a sensing component (104, 204, 310) that can measure a level associated with a first memory cell (304). The system can also include a comparison component (106, 206, 314) that can compare the measured level associated with the first memory cell (304) to non-overlapping threshold levels (404-436), wherein such measurement can be used to determine a unique bit level associated with a second memory cell. By way of further example, methodologies are described for accurately measuring a bit level of a first cell of a dual-cell memory device, by comparing a second cell value to non-overlapping threshold values (404-436), as measured with respect to a reference associated with the second cell (436, 522, 622).