III-NITRIDE BASED LIGHT-EMITTING DIODE STRUCTURE WITH MONOLITHICALLY INTEGRATED SIDEWALL DEFLECTORS AND METHOD OF THEREOF

摘要

An III-nitride based light emitting diode structure and a manufacturing method thereof are provided to improve surface extraction efficiency by 2 times by forming monolithically integrated sidewall defectors through a conventional manufacturing process of LED. An LED structure has a Hi-nitride epi layer formed on a support substrate, in which angled mesa deflector is formed in a sidewall of the III-nitride epi layer and sidewall angle is between 20 degrees and 40 degrees. The support substrate is made of any one selected from the group consisting of sapphire, Si, SiC, MgAl2O4, ZnO, and MgO. The epi layer is made of any one selected from the group consisting of GaN, GaP, and GaAs. The epi layer has the structure that p-electrode is formed at the upper side of n- electrode, and the total thickness of the III-nitride thin film including the n-electrode and the p-electrode is in the range of 1 to 10 micrometers.