METHOD OF PLASMA ION IMPLANTATION EMPLOYING A DEPOSITION-TYPE SOURCE GAS AND A ETCHING-TYPE SOURCE GAS

摘要

A plasma doping method for using deposition-type source gas and etch-type source gas is provided to prevent a conductive layer from being etched or a material layer from being deposited on the conductive layer while impurities are implanted into the conductive layer during a plasma ion implantation process by simultaneously or alternately using deposition-type source gas and etch-type source gas during the plasma ion implantation process. Impurities are implanted into a semiconductor substrate(100) by a plasma ion implantation process(10). Deposition-type source gas and etch-type source gas are used in the plasma ion implantation process, and at least one of the deposition-type source gas and the etch-type source gas includes a dopant gas containing impurities. For a first time interval in the plasma ion implantation process, the deposition-type source gas and the etch-type source gas can be supplied simultaneously.