首页> 外国专利> VOLTAGE CONTROLLED OSCILLATOR USING TUNABLE ACTIVE INDUCTOR

VOLTAGE CONTROLLED OSCILLATOR USING TUNABLE ACTIVE INDUCTOR

机译:使用可调有源电感器的电压控制振荡器

摘要

It is arranged to carry out none blocking capacitor of an oscillator using a voltage controlled oscillator of a turntable active inductor, the DC voltage for being connected to active inductor is reduced by using a p- tail current source. A voltage controlled oscillator using a turntable active inductor includes a pair of of CMOS transistor (M1, M2) and active inversion (L1, L2). In CMOS transistor, one of a CMOS transistor is connected to a sewer of other CMOS transistors and is connected to a p- tail current source (IL). The source of CMOS transistor is connected to ground connection by one second cone. Active inversion is connected to a sewer of each CMOS transistor. Active inversion includes the first CMOS transistor, the second CMOS transistor and a LC accumulators. In the first CMOS transistor, one for the first time current source be connected between a sewer and one. In the second CMOS transistor, a sewer is connected to the door of the first CMOS transistor. LC accumulators are connected between a source of the first CMOS transistor and one of the second CMOS transistor.
机译:布置成使用转台有源电感器的压控振荡器来执行振荡器的无阻塞电容器,通过使用p-尾电流源来降低用于连接至有源电感器的DC电压。使用转盘有源电感器的压控振荡器包括一对CMOS晶体管(M1,M2)和有源反相(L1,L2)。在CMOS晶体管中,CMOS晶体管之一连接到其他CMOS晶体管的下水道,并且连接到p-尾电流源(IL)。 CMOS晶体管的源极通过一锥形连接到接地。有源反相连接到每个CMOS晶体管的下水道。有源反相包括第一CMOS晶体管,第二CMOS晶体管和LC累加器。在第一CMOS晶体管中,第一次将电流源连接在下水道和下水道之间。在第二CMOS晶体管中,下水道连接到第一CMOS晶体管的门。 LC累加器连接在第一CMOS晶体管的源极和第二CMOS晶体管之一的源极之间。

著录项

  • 公开/公告号KR20080046941A

    专利类型

  • 公开/公告日2008-05-28

    原文格式PDF

  • 申请/专利权人 DONGBU ELECTRONICS CO. LTD.;

    申请/专利号KR20060116650

  • 发明设计人 YOON YEO CHO;KIM SU TAE;

    申请日2006-11-24

  • 分类号H03B5/08;H03B5/12;

  • 国家 KR

  • 入库时间 2022-08-21 19:53:38

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