MODELING METHOD FOR NANOMETER SCALE FIELD EFFECT TRANSISTOR

摘要

A method for modeling threshold voltage of a nanometer scale FET(Field Effect Transistor) is provided to estimate the threshold voltage of a bulk FinFET precisely by considering corner effect appeared at an upper part of a gate in a real process of a tri-gate structure bulk FinFET. A fitting parameter is applied to a modeling method considering single channel effect and narrow effect of a tri-gate structure bulk FinFet. A corner factor is additionally applied to the modeling method to consider corner effect appeared at an upper part of a gate in a real process of the tri-gate structure bulk FinFET.