首页> 外国专利> Fabricating Method of Semiconductor Device Containing Both Resist Flow Process and Film-Coating Process

Fabricating Method of Semiconductor Device Containing Both Resist Flow Process and Film-Coating Process

机译:包含阻流工艺和膜涂覆工艺的半导体器件的制造方法

摘要

relates to a method for manufacturing a semiconductor device, the prey is formed a photoresist pattern on top of each layer following a pattern , the resist flow process (resist flow process) and the formation of the coating film is heated , by sequentially performing the process step of removing , using independent and uniformly reduced to obtain a photoresist pattern , and this photoresist pattern density , exposure to a method that can be used for any semiconductor manufacturing process of a fine pattern having a resolution or more devices .
机译:本发明涉及一种半导体器件的制造方法,在该猎物之后,在图案之后的各层的顶部形成光致抗蚀剂图案,并依次进行抗蚀剂流动处理(resist flow process)和加热涂膜的形成。去除的步骤,使用独立的和均匀的减少以获得光致抗蚀剂图案和该光致抗蚀剂图案密度的曝光方法,该方法可用于具有分辨率或更高分辨率的精细图案的任何半导体制造工艺。

著录项

  • 公开/公告号KR100811410B1

    专利类型

  • 公开/公告日2008-03-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050085255

  • 发明设计人 정재창;

    申请日2005-09-13

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:24

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