METHOD FOR OPERATING A PMC MEMORY CELL AND CBRAM MEMORY CIRCUIT

摘要

The present invention relates to a method of operating a PMC memory cell for use in a CBRAM memory array, on the basis of the PMC memory cell includes a solid electrolyte, the electric field applied to selectively expand or collapse a conductive path. PMC memory cell is programmed to change to program state by applying a programming voltage, PMC memory cell is programmed to change to an erased state by applying an erase voltage. Refresh voltage is prevented from being programs in the pre-determined and applied to the PMC memory cell at the time, there is a program state of the PMC memory cell stabilization accordingly, at this time, the refresh voltage is a PMC memory cell erased when applying the refresh voltage state to the program state is selected such that is selected so that the stability of the program execution state of a PMC memory cell by applying the refresh voltage.