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REPLACEMENT GATE FLOW FACILITATING HIGH YIELD AND INCORPORATION OF ETCH STOP LAYERS AND/OR STRESSED FILMS
REPLACEMENT GATE FLOW FACILITATING HIGH YIELD AND INCORPORATION OF ETCH STOP LAYERS AND/OR STRESSED FILMS
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机译:置换门流有助于高产量和加入止蚀层和/或应力膜
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摘要
The present invention is to bring an improvement in performance as a result causes stress in the crystal transistors, the upper layer structure relates to the deposition of 710 . Stress layer can be formed over the plurality of transistors or a plurality of the above selected transistor formed on the substrate .
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