首页> 外国专利> USE OF A METAL COMPLEX AS N-DOPANT FOR AN ORGANIC SEMICONDUCTING MATRIX MATERIAL, ORGANIC SEMICONDUCTOR MATERIAL AND ELECTRONIC COMPONENT, AS WELL AS DOPANT AND LIGAND AND METHOD FOR PRODUCING THE SAME

USE OF A METAL COMPLEX AS N-DOPANT FOR AN ORGANIC SEMICONDUCTING MATRIX MATERIAL, ORGANIC SEMICONDUCTOR MATERIAL AND ELECTRONIC COMPONENT, AS WELL AS DOPANT AND LIGAND AND METHOD FOR PRODUCING THE SAME

机译:金属络合物作为N型掺杂剂用于有机半导体基质材料,有机半导体材料和电子组分以及掺杂剂和配体的制备方法

摘要

The method involves using a metal complex as a dopant for doping an organic semiconducting matrix material to vary the electrical properties, whereby the metal complex represents an n-dopant relative to the matrix material, or using a metal complex to produce an electronic component with an electronically functional region containing the metal complex. The metal complex is a neutral electron-rich metal complex. Independent claims are also included for the following: (A) a semiconducting material (B) an organic semiconducting material (C) a method of manufacturing an organic semiconducting material (D) an electronic component (E) a dopant (F) a ligand for a metal complex (G) and the use of a ligand in a process of manufacturing a dopant.
机译:该方法包括使用金属配合物作为掺杂剂来掺杂有机半导体基质材料以改变电性能,从而金属配合物相对于基质材料代表n型掺杂剂,或使用金属配合物生产具有含有金属络合物的电子功能区。金属络合物是中性的富电子的金属络合物。还包括以下方面的独立权利要求:(A)半导体材料(B)有机半导体材料(C)制造有机半导体材料的方法(D)电子元件(E)掺杂剂(F)配体金属配合物(G)以及在制造掺杂剂的过程中配体的使用。

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