METHOD FOR PRODUCING quasicrystalline films based on aluminum

摘要

1.method u043fu043eu043bu0443u0447u0435u043du0438u00a0 u043au0432u0430u0437u0438u043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0438u0445 films based on u0430u043bu044eu043cu0438u043du0438u00a0, u0437u0430u043au043bu044eu0447u0430u044eu0449u0438u0439u0441u00a0 in u043fu043eu0441u043bu043eu0439u043du043eu043c coating materials, the composition of the u043au0432u0430u0437u0438u043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0439 film, on a substrate, followed by u043eu0442u0436u0438u0433u043eu043c, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because of u043fu0440u043eu0432u043eu0434u00a0u0442 cathodic material layer growing method u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 in u00a0u0447u0435u0439u043au0438 penning.the number of sections and materials u043au0430u0442u043eu0434u043eu0432 u00a0u0447u0435u0439u043au0438 correspond to the composition u043au0432u0430u0437u0438u043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0439 film, after which the u043du0430u043du043eu0441u00a0u0442 protective coating Al2Ou0437 and provo u0434u00a0u0442 vacuum annealing.;2. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that the total thickness of the film u0438u0437u043cu0435u043du00a0u00a0 u043au0432u0430u0437u0438u043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0439 shape, thickness and the total number of applied layers.;3. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that a material applied with aluminum, choose the material of u0440u00a0u0434u0430 cu, fe, cr, co, v, ni, mn, ti, pd, ru, re, rh, ir, os, mn, mo, si, mg, li,