method u043eu0441u0430u0436u0434u0435u043du0438u00a0 alloy films u043au0440u0435u043cu043du0438 polycrystalline semi-conductor

摘要

method u043eu0441u0430u0436u0434u0435u043du0438u00a0 alloy films polycrystalline semi-conductor u043au0440u0435u043cu043du0438u00a0 comprising deposition on silicon substrate u043fu043eu0434u0441u043bu043eu00a0 polycrystalline semi-conductor u043au0440u0435u043cu043du0438u00a0 thickness 1 0 - 50 nm to 560 - 580u0441 u043fu0438u0440u043eu043bu0438u0442u0438u0447u0435u0441u043au0438u043c u043cu043eu043du043eu0441u0438u043bu0430u043du0430 decay at a pressure not more than 13.3 pa, u0434u043eu0440u0430u0449u0438u0432u0430u043du0438u0435 u0441u043bu043eu00a0 u043au0440u0435u043cu043du0438u00a0 temperature u043eu0441u0430u0436u0434u0435u043du0438u00a0 u043fu043eu0434u0441u043bu043eu00a0 with decreased u0434u0430u0432u043b u0435u043du0438u0438 of u043fu0430u0440u043eu0433u0430u0437u043eu0432u043eu0439 mixturewhen the ratio of ingredients containing phosphine and u043cu043eu043du043eu0441u0438u043bu0430u043d 00008 - 00035 and subsequent heat treatment in the nitrogen and oxygen in an 850 1000u0441, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because, with the purpose of yu u043fu043eu0432u044bu0448u0435u043du0438u00a0 productivity process while reducing the relative u0441u043eu043fu0440u043eu0442u0438u0432u043bu0435u043du0438u00a0 films by u0443u0441u043au043eu0440u0435u043du0438u00a0 u043eu0441u0430u0436u0434u0435u043du0438u00a0 and u0443u043bu0443u0447u0448u0435u043du0438u00a0 structure film, dora the development of u0441u043bu043eu00a0 u043au0440u0435u043cu043du0438u00a0 u043fu0440u043eu0432u043eu0434u00a0u0442 of u043fu0430u0440u043eu0433u0430u0437u043eu0432u043eu0439 mixturefurther containing hydrogen at a pressure of 70 to 180 pa and total u043fu0430u0440u0446u0438u0430u043bu044cu043du043eu043c pressure u0444u043eu0441u0444u0438u043du0430 and u043cu043eu043du043eu0441u0438u043bu0430u043du0430 not more than 66.5 pa, after which the end of u0444u043eu0441u0444u0438u043du0430 and hydrogen processing and u043fu0440u043eu0432u043eu0434u00a0u0442 besieged film u043cu043eu043du043eu0441u0438u043bu0430u043du0435 1-5 min at a pressure of 26.6 - 66.5 pa at a temperature u043eu0441u0430u0436u0434u0435u043du0438u00a0 u043fu043eu0434u0441u043bu043eu00a0.