首页> 外国专利> A method for determining a person's dose in mixed neutron - / photons - fields as well as of other variables are measured in other radiation fields

A method for determining a person's dose in mixed neutron - / photons - fields as well as of other variables are measured in other radiation fields

机译:在混合中子/光子场以及其他变量中测量人剂量的方法

摘要

A method for determining a person''s dose, of the environment - equivalent dose, of the effective dose and of the kerma in mixed neutron - / photons - fields, characterized by the,a) that only a semiconductor detector both for the determination of the neutrons - as well as of the photons dose is used,b) that the pulse heights information from the semiconductor detector for the determination of neutrons - and photons dose is used, the pulses in a suitable pulse height interval are summed up and are divided by an average response and thereby simultaneously both the neutrons - as well as the photons dose is determined,c) that the semiconductor detector with a sensitive surface between 0,1 cm2 and 30 cm2 at the voltage applied between 1 v and 100 v a sensitive depleted layer with a thickness of between 1 μm and 400 μm, as well as a dead layer with a thickness of between 10 nm and 20 μm in front of the sensitive layer,d) that extends in front of the semiconductor detector, an air gap (up to 2 cm wide) is located,e) that..
机译:一种确定人的剂量,环境-等效剂量,有效剂量和混合比释质的方法,其特征在于:a)仅使用半导体探测器进行测定(b)使用了中子的光子剂量-以及使用了光子剂量-b)使用了用于确定中子的半导体检测器的脉冲高度信息-并且使用了光子剂量,将适当脉冲高度间隔中的脉冲相加并得到除以平均响应,从而同时确定中子和光子剂量,c)半导体探测器的敏感表面在0.1 cm 2 和30 cm 之间2 施加在1 v和100 va之间的电压,厚度为1μm至400μm的敏感耗尽层,以及在敏感层前面的厚度为10 nm至20μm的死层d)层延伸到半导体检测器的前面空气间隙(最大2厘米)位于,e)。

著录项

  • 公开/公告号DE10132550B4

    专利类型

  • 公开/公告日2008-07-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2001132550

  • 发明设计人

    申请日2001-07-09

  • 分类号G01T1/02;G01T1/24;G01T3/08;

  • 国家 DE

  • 入库时间 2022-08-21 19:50:13

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