A process for the formation of side wall - distance structures and field effect transistors as well as structuring methods

摘要

A method of forming a a side wall - flu-spacer structure (5) and having by means of a substrate surface (10) of a semiconductor substrate (1) provided in the first structure (2), comprising:Providing a semiconductor substrate (1), comprising a first section, which consists of a first material;Formation of the first structure (2) with at least one to a substrate surface (10) of the semiconductor substrate vertical and in the first section, the tool side wall and a to the at least one side wall adjoining second portion made of a second material on the first section, wherein the second material, the growth of a from a gaseous precursor (8) preceding third material; andFeeding of the precursor (8), wherein the first, second and third material are so selected that the third material which grows selectively to the second section and the third material along the at least one vertical side wall extending side wall - flu-spacer structure (5) is formed which, in horizontal cross sections in height of the second portion has the same layer thickness.