Method for production of integrated circuits particularly for structuring of lines, involves building covering structure elements over active semiconductor area and area of insulation structure

摘要

The method involves building covering structure elements (215,225) over a active semiconductor area and an area of an insulation structure, which separates the active semiconductor area from another active semiconductor area and reducing chamfer of end areas (215e,225e) of the covering structure element. Lateral measurements of the covering structure element are reduced in order to form a reduced covering structure element. A material layer (206) is formed below the covering structure element. An INDEPENDENT claim is also included for a semiconductor component has an isolation structure.