Semiconductor component arrangement, has control electrodes controlled in operating condition in which transistor is blocked such that potentials of control electrodes gradually provide potential gradient in drift zone

摘要

The arrangement has a control circuit (10) connected to a gate electrode (90), control electrodes (91-9n) and a drain zone (5). The circuit is formed to control the control electrodes in an operating condition in which a metal oxide semiconductor (MOS) transistor conducts to form a conductive channel along a dielectric fluid in a drift zone (4). The control electrodes are controlled in another operating condition in which the MOS transistor is blocked in such a manner that potentials of the control electrodes gradually provide a potential gradient in the drift zone.