Connection structure for e.g. vertical FET, has electrode connected with connecting structure of potential, another electrode connected with connecting structure of another potential, and trenches running on edge area

摘要

The connection structure has electrodes arranged in the same electrode level and correspond to a main surface of a substrate of an electronic component (100) e.g. vertical FET. One of the electrodes is provided at an edge area-sided end of a trench (130) and extends beyond the other electrode at an edge area-sided end of another trench (230). The former electrode is connected with a connecting structure (110) of a potential, and the latter electrode is connected with a connecting structure (210) of another potential. The trenches run on an edge area.