首页> 外国专利> Single crystal silicon drawing apparatus, method for preventing the contamination of silicon melt, and apparatus for preventing the contamination of silicon melt

Single crystal silicon drawing apparatus, method for preventing the contamination of silicon melt, and apparatus for preventing the contamination of silicon melt

机译:单晶硅拉丝装置,防止硅熔液污染的方法和防止硅熔液污染的设备

摘要

Single crystal silicon drawing device comprises, in a furnace, a cylindrical body, which surrounds a pulling path of a single crystal silicon, and a thermal shielding body, which surrounds the cylindrical body, wherein the single crystal silicon drawing the single crystalline silicon upward, whereas it is a gas from an upper part to a lower part in the furnace, wherein the pulling path of the single crystal silicon, the cylindrical body and the thermal shielding body are arranged so that a speed of a gas flow, which between a lower end of the cylindrical body and the thermal shielding body, to a speed is set, in the case of the dust on the silicon melt is prevented from falling onto the.
机译:单晶硅拉制装置包括在炉中的围绕单晶硅的拉制路径的圆柱体和围绕圆柱体的热屏蔽体,其中,单晶硅向上拉单晶硅,而在炉中是从上部到下部的气体,其中单晶硅,圆柱体和热屏蔽体的拉动路径布置成使得气体的速度在较低的温度和较低的温度之间。在防止硅熔体上的灰尘掉落到圆柱体和热屏蔽体的末端上的情况下,将其设定为一定速度。

著录项

  • 公开/公告号DE112006002580T5

    专利类型

  • 公开/公告日2008-08-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20061102580T

  • 发明设计人

    申请日2006-06-27

  • 分类号C30B29/06;C30B15/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:29

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号