Polyimide-thin layer manufacturing method for manufacturing e.g. microchip, in industrial application, involves carrying out melting process to achieve contraction of connection and rotation and removal of regions of microstructure layer

摘要

The method involves depositing a sacrificial layer (20) i.e. phosphosilicate glass, on a silicon substrate (10), and depositing a microstructure layer (30) i.e. polycrystalline silicon layer, on the sacrificial layer. Polyimide thin films (40) are deposited on the layer (30). Patterns are formed and a flexible connection form is etched on the films. A wet-etching process is carried out to etch and remove a preset region of the layer (20). A melting process is carried out to achieve contraction of a flexible connection (41) and rotation and removal of preset regions of the layer (30).