首页> 外国专利> Piezo-crystal's temperature-dependent stress-less length variation irreversibility determining method, involves determining whether variation is irreversible when determined temperature gradient is less than comparison temperature gradient

Piezo-crystal's temperature-dependent stress-less length variation irreversibility determining method, involves determining whether variation is irreversible when determined temperature gradient is less than comparison temperature gradient

机译:压电晶体随温度变化的无应力长度变化不可逆性确定方法,涉及到当确定的温度梯度小于比较温度梯度时确定变化是否不可逆

摘要

The method involves determining a temperature gradient in a surrounding area of a piezo-crystal (2) related to a preset length of time. A comparison temperature gradient is provided relative to the preset length of time. The determined temperature gradient is compared with the comparison temperature gradient. A determination is made whether temperature-dependent stress-less length variation of the piezo-crystal is irreversible, when the determined temperature gradient is smaller than the comparison temperature gradient. An independent claim is also included for a device for operating a piezo-crystal.
机译:该方法包括确定与预设时间长度有关的压电晶体(2)周围区域中的温度梯度。提供相对于预设时间长度的比较温度梯度。将确定的温度梯度与比较温度梯度进行比较。当所确定的温度梯度小于比较温度梯度时,确定压电晶体的与温度有关的无应力的长度变化是否不可逆。还包括用于操作压电晶体的设备的独立权利要求。

著录项

  • 公开/公告号DE102007023547B3

    专利类型

  • 公开/公告日2008-06-26

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE20071023547

  • 发明设计人 JUNG UWE;ZHANG HONG;

    申请日2007-05-21

  • 分类号G01B21/02;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:15

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