Semiconductor device has cap electrical conductivity regions that function as draw-out electrical conductivity regions of cap substrate, are electrically connected to movable and fixed base semiconductor regions of base substrate

摘要

The device (100) has insulation separation trench (31) that penetrates cap substrate (C1) formed with several cap electrical conductivity regions (Ce1,Ce2). The cap substrate is bonded together facing predetermined region (R1) in surface layer portion of base substrate (B1) so that trench (23) of base substrate is sealed with concave portion (32) on cap substrate. The cap regions function as draw-out electrical conductivity regions and are electrically connected to movable and fixed base semiconductor regions (Bs1,Bs2). An independent claim is included for semiconductor device manufacturing method.