Magnetic device for e.g. magnetic RAM, has non magnetic layer inducing antiferromagnetic coupling force between two magnetic layers whose direction and amplitude attenuate effects of force exerted between magnetic layers

摘要

The device has two layers e.g. platinum/cobalt layers, formed of magnetic materials and separated by an interposed layer e.g. layer with 1 nanometer of ruthenium, which is made of non-magnetic material. Each magnetic layer includes a magnetization perpendicularly oriented to a plane of the magnetic layers. The non magnetic layer induces an antiferromagnetic coupling force between the magnetic layers whose direction and amplitude attenuate effects of the antiferromagnetic coupling force from magnetostatic origin, where the effects are exerted between the magnetic layers.