Ultraviolet dosage measuring sensor for use in medical field, has received ultraviolet dosage measured from measurement of intensity variation of current crossing drain of transistor

摘要

The sensor (1) has an MOS type transistor (2), which includes a grid (G), drain (D), and source (S). A floating gate (FG) is positioned between a gate (G) and a drain of the transistor. A received ultraviolet dosage is measured from measurement of an intensity variation of a current crossing the drain of the transistor or variation of a voltage threshold of the transistor between before and after exposition to the UV radiation. An independent claim is also included for a method for measuring ultraviolet dosage received by the sensor.